THz Scanner Based on Planar Antenna-Supplied Silicon Field-Effect Transistors

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] th...

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors

The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology [1] presently in manufacturing involves a sophisticated heavily strained silicon channel and a high-k dielectric/metal gate stack. Although alternative channel materials with a mobility higher than...

Ballistic Spin Field-Effect Transistors Built on Silicon Fins

Ballistic Transport in Spin Field-Effect Transistors Built on Silicon

The spin field-effect transistor (SpinFET) proposed by Datta and Das [1] is composed of ferromagnetic metallic source and drain contacts which sandwich a semiconductor region. Current modulation in the devices is achieved through manipulation of the orientation of the electron spin in the semiconductor channel. We consider the value of the conduction band mismatch between the contacts and the c...